Impact of Work Function Engineering in Charge Plasma Based Bipolar Devices-Reference-Cited by-同舟云学术

Impact of Work Function Engineering in Charge Plasma Based Bipolar Devices

Published:2021-05-30 Issue: Volume: Page:
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Bramhane Lokesh,Salankar Suresh,Gaikwad Mahendra,Panchore Meena

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s12633-021-01146-9.pdf

Reference30 articles.

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3. Rajasekharan B, Hueting RJE, Salm C, van Hemert T, Wolters RAM, Schmitz J (2010) Fabrication and characterization of the charge plasma diode. IEEE Electron Device Lett 31(6):528–530

4. Kumar MJ, Nadda K (Apr. 2012) Bipolar charge plasma transistor: a novel three terminal device. IEEE Trans. Electron Devices 59(4):962–967

5. Singh S Impact of strained silicon on the device performance of a bipolar charge plasma transistor. J Semicond

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