Analysis and Design of Novel Doping Free Silicon Nanotube TFET with High-density Meshing Using ML for Sub Nanometre Technology Nodes-Reference-Cited by-同舟云学术

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Analysis and Design of Novel Doping Free Silicon Nanotube TFET with High-density Meshing Using ML for Sub Nanometre Technology Nodes

Published:2022-04-06 Issue:17 Volume:14 Page:11235-11242
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Kumar Ravi,Devi B. Aruna,Sireesha V.,Reddy A. Kishore,Hariharan I.,Konguvel E.,Vignesh N. A^ORCID

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s12633-022-01859-5.pdf

Reference29 articles.

1. Huang BJ, Fang EJW, Hsueh SSY, Huang R, Lin A, Chiang CH, Lin YH, Hsieh WW, Chen B, Zhuang YC, Wu CY (2021) 35.1 An octa-core 2.8/2GHz dual-gear sensor-assisted high-speed and power-efficient CPU in 7nm FinFET 5G Smartphone SoC. In: 2021 IEEE International Solid-State Circuits Conference (ISSCC), vol 64. IEEE, pp 490–492

2. Singh A, Subbarao G, Shifaw AF, Tekilu D (2021) Parametric study of silicon-based tubular Tunnel FET for biosensing application. 2021 Devices for Integrated Circuit (DevIC), pp 597–600. https://doi.org/10.1109/DevIC50843.2021.9455901

3. Japa A, Majumder MK, Sahoo SK, Vaddi R, Kaushik BK (2021) Hardware security exploiting post-CMOS devices: fundamental device characteristics, state-of-the-art countermeasures, challenges and roadmap. In: IEEE Circuits and Systems Magazine, vol 21, no 3, pp 4–30 (thirdquarter). https://doi.org/10.1109/MCAS.2021.3092532

4. Vidhyadharan S, Dan SS (2021) An efficient ultra-low-power and superior performance design of ternary half adder using CNFET and gate-overlap TFET devices. IEEE Trans Nanotechnol 20:365–376. https://doi.org/10.1109/TNANO.2020.3049087

5. Gedam A, Acharya B, Mishra GP (2021) Design and performance assessment of dielectrically modulated nanotube TFET biosensor. IEEE Sens J 21(1):16761–16769. https://doi.org/10.1109/JSEN.2021.3080922

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