Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Reference34 articles.
1. Colinge JP, Lee CW, Afzalian A, Akhavan ND, Yan R, Ferain I, Razavi P, O'neill B, Blake A, White M, Kelleher AM (2010) Nanowire transistors without junctions. Nat Nanotechnol 5:225–229
2. Skotnicki T, Hutchby JA, King T-J, Wong H-SP, Boeuf F (2005) The end of CMOS scaling: toward the introduction of new materials and structural changes to improve MOSFET performance. IEEE Circuits Devices Mag 21(1):16–26
3. Hu C (2004) Device challenges and opportunities. Proc VLSI Symp Technol:4–5
4. Borkar S (2004) Circuit techniques for subthreshold leakage avoidance, control, and tolerance. In IEDM Tech Dig:421–424,
5. Sahu PK, Mohapatra SK, Pradhan KP (2013) A study of SCEs and analog FOMs in GS-DGMOSFET with lateral Asymmetric Channel doping. J Semicond Technol Sci 13(6):647–654