Design and Performance Evaluation of 6nm HEMT with Silicon Sapphire Substrate
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-01900-7.pdf
Reference22 articles.
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3. Zhang K, Kong C, Zhou J, Kong Y, Chen T (2017) Highperformance enhancement-mode Al2O3/InAlGaN/GaN MOS highelectron mobility transistors with a self-aligned gate recessing technology. Appl Phys Express 10:024101. https://doi.org/10.7567/APEX.10.024101
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