Impact of Sub Band Gap States of Amorphous Silicon Oxide Layer on Device Performance
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-023-02787-8.pdf
Reference35 articles.
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2. Watanabe H, Haga K, Lohner T (1993) Structure of high-photosensitivity silicon-oxygen alloy films. J Non-Cryst Solids 164–166:1085–1088. https://doi.org/10.1016/0022-3093(93)91187-8
3. Peter Seif J, Descoeudres A, Filipič M, Smole F, Topič M, Charles Holman Z, De Wolf S, Ballif C (2014) Amorphous silicon oxide window layers for high-efficiency silicon heterojunction solar cells. J Appl Phys 115:024502. https://doi.org/10.1063/1.4861404
4. Zhang H, Nakada K, Miyajima S, Konagai M (2015) High-performance a-si1-xox:h/c-si heterojunction solar cells realized by the a-si:h/-xox:h stack buffer layer. Phys Status Solidi (RRL) - Rapid Res Lett 9:225–229. https://doi.org/10.1002/pssr.201409546
5. Wen L, Zhao L, Wang G, Jia X, Xu X, Qu S, Li X, Zhang X, Xin K, Xiao J, Wang W (2023) Beyond 25
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