Comparison of Drain Current Characteristics of Advanced MOSFET Structures - a Review
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01638-8.pdf
Reference29 articles.
1. Ferain I, Colinge C, Colinge J (2011) Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors. Nature 479:310–316
2. Girija Sravani K, Guha K, Srinivasa Rao K (2018) An investigation on capacitance modeling of step strcture RF MEMS perforated shunt switch. Proceedings of International Conference on 2018 IEEE Electron Device Kolkata Conference, EDKCON 2018, pp 302- 311
3. Aditya M, Rao KS, Sravani KG, Guha K (2021) Simulation and drain current performance analysis of High-K Gate Dielectric FinFET. Silicon. https://doi.org/10.1007/s12633-021-01176-3
4. Srinivasa Rao K, Thalluri LN, Guha K, Girija Sravani K (2018) Fabrication and characterization of capacitive RF MEMS perforated switch. IEEE Access, pp 77519–77528
5. Girija Sravani K, Srinivasa Rao K (2018) ‘Analysis of RF MEMS shunt capacitive switch with uniform and non-uniform meanders. Microsyst Technol 24(2):1309–1315
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A review on the state of the art of dynamic voltage restorer: topologies, operational modes, compensation methods, and control algorithms;Engineering Research Express;2024-03-01
2. RF and linearity parameters analysis of 20 nm gate-all-around gate-stacked junction-less accumulation mode MOSFET for low power circuit applications;Microsystem Technologies;2024-01-16
3. Low temperature passivation of silicon surfaces for enhanced performance of Schottky-barrier MOSFET;Nanotechnology;2023-12-19
4. A machine learning framework for predicting physical properties in configuration space of gate alloys;Materials Today Communications;2023-12
5. Small signal model parameter extraction for cylindrical silicon-on-insulator Schottky barrier MOSFET;Microsystem Technologies;2023-04
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3