Effect of Raised Buried Oxide on Characteristics of Tunnel Field Effect Transistor
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-01681-z.pdf
Reference33 articles.
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3. Zhao Y, Liang Z, Huang Q, Chen C, Yang M, Sun Z, Zhu K, Wang H, Liu S, Liu T, Peng Y (2019) A novel negative capacitance tunnel FET WithImproved subthreshold swing and nearly non-hysteresis through hybrid modulation. IEEE Electron Device Lett 40(6):989–992
4. Pearce CW, Yaney DS (1985) Shorts-channel effects in MOSFETs. IEEE Electron Device Lett 6(7):326–328
5. Chaudhary R, Sharma A, Sinha S, Yadav J, Sharma R, Mukhiya R, Khanna VK (2015) Fabrication and characterization of Al gate n-MOSFET, on-chip fabricated with Si3N4 ISFET. 19th International Symposium on VLSI Design and Test, IEEE, pp 1–4
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