Ultra Steep Ge-Source Dopingless Tunnelling Field Effect Transistor with Enhanced Drive Current: DC to Linearity Characteristics Analysis
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-021-01339-2.pdf
Reference41 articles.
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3. Masuda H, Nakai M, Kubo M (1979) Characteristics and limitation of scaled-down MOSFET's due to two-dimensional field effect. IEEE Transactions on Electron Devices 26(6):980–986
4. Bangsaruntip S, Cohen GM, Majumdar A, Sleight JW (2010) Universality of short-channel effects in undoped-body silicon nanowire MOSFETs. IEEE Electron Device Letters 31(9):903–905
5. J.P. Colinge, FinFETs and other multi-gate transistors, New York: Springer, (Vol. 73),2008
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