Performance Analysis of Doping Less Nanotube Tunnel Field Effect Transistor for High Speed Applications
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-01839-9.pdf
Reference28 articles.
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3. Japa A, Majumder MK, Sahoo SK, Vaddi R, Kaushik BK (2021) Hardware security exploiting post-CMOS devices: fundamental device characteristics, state-of-the-art countermeasures, challenges and roadmap. IEEE Circuits Syst Mag 21(3):4–30. (thirdquarter). https://doi.org/10.1109/MCAS.2021.3092532
4. Vidhyadharan S, Dan SS (2021) An efficient ultra-low-power and superior performance design of ternary half adder using CNFET and gate-overlap TFET devices. IEEE Trans Nanotechnol 20:365–376. https://doi.org/10.1109/TNANO.2020.3049087
5. Gedam A, Acharya B, Mishra GP (2021) Design and performance assessment of dielectrically modulated nanotube TFET biosensor. IEEE Sens J 21(1):16761–16769. https://doi.org/10.1109/JSEN.2021.3080922
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