L-Shaped Schottky Barrier MOSFET for High Performance Analog and RF Applications
Author:
Funder
University Grants Commission, Govt. of India
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-02006-w.pdf
Reference39 articles.
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2. Shah KA, Khanday FA (2020) Nanoscale Electronic Devices and Their Applications. CRC Press, Boca Raton
3. Chaudhry A, Kumar MJ (2004) Controlling short-channel effects in deep-submicron SOI MOSFETs for improved reliability: A review. IEEE Trans Device Mater Rel 4(1):99–109
4. Wang C, Snyder JP, Tucker JR (1998) Sub-50-nm PtSi Schottky source/drain p-MOSFETs. In: Proc. 56th Annu. Device Res. Conf. Dig., pp. 72–73
5. Itoh A, Saitoh M, Asada M (2000) Very short channel metal-gate Schottky source/drain SOI-PMOSFETs and their short channel effect. In: Proc. 58th Annu. Device Res. Conf. Dig., pp. 77–78
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