Performance Improvement of SiGe Based Silicon-On-Insulator Transistor Using Vertically Graded Channel Approach
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s12633-019-0091-6.pdf
Reference16 articles.
1. Maiti CK, Armstrong GA (2001) Applications of silicon-germanium heterostructure devices. CRC Press
2. Verdonckt-Vandebroek S et al (1994) SiGe-channel heterojunction p-MOSFET’s. IEEE Trans. Electron Devices 41(1):90–101
3. Rahimian M, Orouji AA (2011) Nanoscale SiGe-on-insulator (SGOI) MOSFET with graded doping channel for improving leakage current and hot-carrier degradation. Superlattice Microst 50(6):667–679
4. Ning TH, Cook PW, Dennard RH, Osburn CM, Schuster SE, Yu H (1979) 1 μm MOSFET VLSI technology: part IV—hot-electron design constraints. IEEE Trans. Electron Devices 26(4):346–353
5. Lin SC, Kuo JB (1999) Temperature-dependent kink effect model for partially-depleted SOI NMOS devices. IEEE Trans. Electron Devices 46(1):254–258
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1. Study of the electrical parameters of a dual-material double-gate TFET using a strained type II staggered Ge1−x−ySixSny/Ge1−a−bSiaSnb heterojunction;Journal of Computational Electronics;2020-06-30
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