Impact of High-K Gate Dielectric Materials on Uniformly Doped Dual Gate FinFET for Analog and Digital Applications
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-01775-8.pdf
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1. A Generalized Analytical Approach to Model the Gate Tunneling Current in Nanoscale Double Gate MOSFETs;Silicon;2022-06-01
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