Qualitative Analysis of Dual Material Gate (SiO2/HfO2) Underlapped on Drain Side TFET (DMGUD-TFET) Using Work Function Engineering
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-01890-6.pdf
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