Effect of Temperature on Electro-Optical Characteristics of Silicon Based p-n Photodiode (VTB8440BH)
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/article/10.1007/s12633-018-9789-0/fulltext.html
Reference21 articles.
1. Dalapati P, Manik NB, Basu AN (2014) Influence of temperature on tunneling-enhanced recombination in Si based p–i–n photodiodes. J Semicond 35:082001–082005
2. Camin D V, Valerio G (2006) Cryogenic behavior of optoelectronic devices for the transmission of analog signals via fiber optics. IEEE Trans on Nucl Sci 53:440–443
3. Soref R (2010) Silicon Photonics: A review of recent literature. Silicon 2:1–6
4. Manik N B, Basu A N, Mukherjee S C (2000) Characterisation of the photodetector and light emitting diode at above liquid nitrogen temperature. Cryogenics 40:341–344
5. Dalapati P, Manik N B, Basu A N (2015) Study of effective carrier lifetime and ideality factor of BPW 21 and BPW 34B photodiodes from above room temperature to liquid nitrogen Temperature. Cryogenics 65:10–15
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