Design and Performance of Charge-Plasma-Based Schottky –FET CMOS Circuit Ring Oscillator for High Density ICs
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-020-00581-4.pdf
Reference18 articles.
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2. Bhuwalka KK, Schulze J, Eisele I (2005) Scaling the vertical tunnel FET with tunnel Bandgap modulation and gate Workfunction engineering. IEEE Trans Electron Devices 52:909–917. https://doi.org/10.1109/TED.2005.846318
3. Yang W, Yu Z, Tian L (2007) Scaling theory for FinFETs based on 3-D effects investigation. IEEE Trans Electron Devices 54:1140–1147. https://doi.org/10.1109/TED.2007.893808
4. Kumar P, Bhowmick B (2017) 2D analytical model for surface potential based electric field and impact of wok function in DMG SB MOSFET. Superlattice Microst 109:805–814. https://doi.org/10.1016/j.spmi.2017.06.001
5. Kumar P, WasimArif BB (2018) Scaling of dopant segregation Schottky barrier using metal strip buried oxide MOSFET and its comparison with conventional device. Silicon 10:811–820. https://doi.org/10.1007/s12633-016-9534-5
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