Comparison of RF/Analog and Linearity Performance of Various TFETs Using Source Engineering
Author:
Funder
Science and Engineering Research Board
Publisher
Springer Science and Business Media LLC
Subject
Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s12633-022-01868-4.pdf
Reference25 articles.
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3. Qin Z, Wei Z, Seabaugh A (2006) Low-subthreshold-swing tunnel transistors. IEEE Electron Device Lett 27(4):297–300. https://doi.org/10.1109/LED.2006.871855
4. Choi WY, Park B-G, Lee J-D, Liu T-JK (2007) Tunneling field-effect transistors (TFETs) with subthreshold swing (SS) less than 60 mV/dec. IEEE Electron Device Lett 28(8):743–745. https://doi.org/10.1109/LED.2007.901273
5. Ionescu AM, Riel H (2011) Tunnel field-effect transistors as energy-efficient electronic switches. Nature 479(7373):329–337. https://doi.org/10.1038/nature10679
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