Phosphor-Free Apple-White LEDs with Embedded Indium-Rich Nanostructures Grown on Strain Relaxed Nano-epitaxy GaN-Reference-Cited by-同舟云学术

Phosphor-Free Apple-White LEDs with Embedded Indium-Rich Nanostructures Grown on Strain Relaxed Nano-epitaxy GaN

Published:2010-08-01 Issue:11 Volume:5 Page:1788-1794
ISSN:1931-7573
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Soh C. B.,Liu W.,Yong A. M.,Chua S. J.,Chow S. Y.,Tripathy S.,Tan R. J. N.

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://www.springerlink.com/index/pdf/10.1007/s11671-010-9712-0

Reference27 articles.

1. Navigant Consulting, Inc. Radcliffe Advisors and SSLS, Inc, March 2008 Solid State Lighting Research and Development, Mutli-Year Program Plan FY’09-FY’14 32–36

2. R. Mueller-Mach, G. Meuller, M. Krames, T. Trottier, IEEE J. Sel. Top. Quantum Electron 8, 339 (2002)

3. B. Gil, Group III-Nitride Semiconductor Compounds, Physics and Application, 4 127 (Clarendon Press, Oxford, 1998)

4. N.A. El-Masry, E.L. Piner, S.X. Liu, S.M. Bedair, Appl. Phys. Lett. 72, 40 (1998)

5. R-J. Xie, N. Hirosaki, M. Mitomo, K. Sakuma, N. Kimura, Appl. Phys. Lett. 89, 241103 (2006)

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