Synthesis and Characterization of Tin Disulfide (SnS2) Nanowires-Reference-Cited by-同舟云学术

Synthesis and Characterization of Tin Disulfide (SnS2) Nanowires

Published:2009-04-05 Issue:7 Volume:4 Page:
ISSN:1556-276X
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Lin Ya-Ting,Shi Jen-Bin,Chen Yu-Cheng,Chen Chih-Jung,Wu Po-Feng

Abstract

Abstract The ordered tin disulfide (SnS2) nanowire arrays were first fabricated by sulfurizing the Sn nanowires, which are embedded in the nanochannels of anodic aluminum oxide (AAO) template. SnS2nanowire arrays are highly ordered and highly dense. X-ray diffraction (XRD) and corresponding selected area electron diffraction (SAED) patterns demonstrate the SnS2nanowire is hexagonal polycrystalline. The study of UV/Visible/NIR absorption shows the SnS2nanowire is a wide-band semiconductor with three band gap energies (3.3, 4.4, and 5.8 eV).

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

https://link.springer.com/content/pdf/10.1007/s11671-009-9299-5.pdf

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