Considerable Enhancement of Field Emission of SnO2Nanowires by Post-Annealing Process in Oxygen at High Temperature-Reference-Cited by-同舟云学术

Considerable Enhancement of Field Emission of SnO2Nanowires by Post-Annealing Process in Oxygen at High Temperature

Published:2009-06-24 Issue:10 Volume:4 Page:
ISSN:1556-276X
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Wang J. B.,Li K.,Zhong X. L.,Zhou Y. C.,Fang X. S.,Tang C. C.,Bando Y.

Abstract

Abstract The field emission properties of SnO2nanowires fabricated by chemical vapor deposition with metallic catalyst-assistance were investigated. For the as-fabricated SnO2nanowires, the turn-on and threshold field were 4.03 and 5.4 V/μm, respectively. Considerable enhancement of field emission of SnO2nanowires was obtained by a post-annealing process in oxygen at high temperature. When the SnO2nanowires were post-annealed at 1,000 °C in oxygen, the turn-on and threshold field were decreased to 3.77 and 4.4 V/μm, respectively, and the current density was increased to 6.58 from 0.3 mA/cm2at the same applied electric field of 5.0 V/μm.

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

https://link.springer.com/content/pdf/10.1007/s11671-009-9367-x.pdf

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