Author:
Wang Feng-Lei,Zhang Li-Ying,Zhang Ya-Fei
Abstract
Abstract
SiC nanowires have been synthesized at 1,600 °C by using a simple and low-cost method in a high-frequency induction furnace. The commercial SiO powder and the arc-discharge plasma pretreated carbon black were mixed and used as the source materials. The heating-up and reaction time is less than half an hour. It was found that most of the nanowires have core-shell SiC/SiO2nanostructures. The nucleation, precipitation, and growth processes were discussed in terms of the oxide-assisted cluster-solid mechanism.
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Cited by
51 articles.
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