Laser Induced Stress Wave Thermometry for In-situ Temperature and Thickness Characterization of Single Crystalline Silicon Wafer: Part I—Theory and Apparatus-Reference-Cited by-同舟云学术

Laser Induced Stress Wave Thermometry for In-situ Temperature and Thickness Characterization of Single Crystalline Silicon Wafer: Part I—Theory and Apparatus

Published:2010-10-15 Issue:7 Volume:51 Page:1103-1114
ISSN:0014-4851
Container-title:Experimental Mechanics
language:en
Short-container-title:Exp Mech

Author:

Vedantham V.,Suh C. S.,Chona R.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Aerospace Engineering

Link

http://link.springer.com/content/pdf/10.1007/s11340-010-9413-8.pdf

Reference12 articles.

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3. Zollner JP, Cimalla V, Pezoldt J (1995) RTP—Temperature monitoring by means of oxidation. J Non-Cryst Solids 187:23–28

4. Chen DH, DeWitt DP, Tsai BK, Kreider KG, Kimes WA (2002) Effects of wafer emissivity on rapid thermal processing temperature measurement. Proc. of the 10th IEEE International Conference on Advanced Thermal Processing of Semiconductors, pp 59–67

5. Tsai BK (2003) Traceable temperature calibrations of radiation thermometers for rapid thermal processing. Proc. of the 11th IEEE International Conference on Advanced Thermal Processing of Semiconductors, pp 101–106

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