Residual Stress Measurement of Single-Crystal SiC with Different Crystallographic Orientations
Author:
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Aerospace Engineering
Link
https://link.springer.com/content/pdf/10.1007/s11340-022-00844-8.pdf
Reference15 articles.
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3. Anzalone R, Camarda M, Alquier D et al (2010) Residual stress measurement and simulation of 3C-SiC single and poly crystal cantilevers. Trans Tech Publications 645–648:865–868. https://doi.org/10.4028/www.scientific.net/MSF.645-648.865
4. Zheng T, Danyluk S (2002) Study of Stresses in Thin Silicon Wafers with Near-infraredphase Stepping Photoelasticity. J Mater Res 17(01):36–42. https://doi.org/10.1557/JMR.2002.0008
5. Lipson H (1957) Elements of X-ray diffraction. Contemp Phys 20(1):87–88. https://doi.org/10.1080/00107517908227805
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2. Stress simulation of 6-inch SiC single crystal;Vacuum;2023-07
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