Preparation, microstructural development and dielectric properties of Pb(Mg1/3Nb2/3)O3-Pb(TixZr1?x)O3 multilayer ceramic capacitors-Reference-Cited by-同舟云学术

Preparation, microstructural development and dielectric properties of Pb(Mg1/3Nb2/3)O3-Pb(TixZr1?x)O3 multilayer ceramic capacitors

Published:1994-10 Issue:19 Volume:29 Page:4999-5004
ISSN:0022-2461
Container-title:Journal of Materials Science
language:en
Short-container-title:J Mater Sci

Author:

Villegas M.,Fern�ndez J. F.,Moure C.,Dur�n P.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF01151090.pdf

Reference16 articles.

1. J. M. Herbert, ?Electrocomponent Science Monographs?, Vol. 6 (Gordon and Breach, New York, 1985).

2. R. J. Bouchard, US Pat. 4 (1980) p. 228.

3. M. Kahn, D. P. Burks, I. Burn andW. A. Schulze, in ?Electronic ceramic properties: devices and applications?, edited by L. M. Levinson (Marcel Dekker, New York, Basel, 1988) pp. 191?274.

4. T. C. Rutt andJ. A. Stynes,IEEE Trans. Parts, Hybrids andPackag. 9 (8) (1973) 145.

5. S. L. Swartz andT. R. Shrout,Mater Res. Bull. 17 (1982) 1245.

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