Highly efficient low-area gate-diffusion-input-based approximate full adders for image processing computing
Author:
Publisher
Springer Science and Business Media LLC
Subject
Hardware and Architecture,Information Systems,Theoretical Computer Science,Software
Link
https://link.springer.com/content/pdf/10.1007/s11227-023-05768-1.pdf
Reference29 articles.
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3. Karamimanesh M, Abiri E, Hassanli K, Salehi MR, Darabi A (2021) A robust and write bit-line free sub-threshold 12T-SRAM for ultra low power applications in 14 nm FinFET technology. Microelectron J. https://doi.org/10.1016/j.mejo.2021.105185
4. Sinha SK, Kumar K, Chaudhury S (2013) CNTFET: the emerging post-CMOS device. In: Proceeding International Conference Signal Processing Communication (ICSC), pp 372–374
5. Deng J, Wong H-SP (2007) A compact SPICE model for carbon-nanotube field-effect transistors including nonidealities and its application—Part I: model of the intrinsic channel region. IEEE Trans Electron Devices 54(12):3186–3194. https://doi.org/10.1109/TED.2007.909030
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