Thermal and kinetic analyses of silicide formation at nanostructured Si/Ni interface
Author:
Funder
Ministry of Science and Higher Education of the Russian Federation
Publisher
Springer Science and Business Media LLC
Link
http://link.springer.com/content/pdf/10.1007/s10973-019-08460-w.pdf
Reference22 articles.
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2. Lavoie C, d’Heurle FM, Detavernier C, Cabral C Jr. Towards implementation of a nickel silicide process for CMOS technologies. Microelectron Eng. 2003;70:144–57.
3. Yaish YE, Katsman A, Cohen GM, Beregovsky M. Kinetics of nickel silicide growth in silicon nanowires: from linear to square root growth. J Appl Phys. 2011;109:094303.
4. Lin YC, Chen Y, Xu D, Huang Y. Growth of nickel silicides in Si and Si/SiOx core/shell nanowires. Nano Lett. 2010;10:4721–6.
5. Katsman A, Beregovsky M, Yaish YE. Formation and evolution of nickel silicide in silicon nanowires. IEEE Trans Electron Devices. 2014;61:3363–71.
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