Reactive diffusion in W–Mo–Si thin films
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Publisher
Springer Science and Business Media LLC
Link
http://link.springer.com/content/pdf/10.1007/s10973-010-1136-7.pdf
Reference15 articles.
1. Chow TP, Steckl AJ. Refractory metal silicides: thin-film properties and processing technology. IEEE Trans Electron Devices. 1983;30:1480–97.
2. McLachlan DR, Avins JB. Refractory metals silicides. Semicond Int. 1984;7:129–38.
3. Mochizuki T, Shibata K, Inoue T, Ohuchi K. A new MOS process using molybdenum disilicide as a gate material. Jpn J Appl Phys Suppl. 1978;17:37–42.
4. Crowder BL, Zirinsky S. 1 μm MOSFET VLSI technology: part VII—metal silicide interconnection technology—a future perspective. IEEE Trans Electron Devices. 1979;26:369–71.
5. Krakhmalev PV, Bergstron J. Tribological behavior and wear mechanisms of MoSi2-base composites sliding against AA6063 alloy at elevated temperature. Wear. 2006;260:450–7.
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1. Effect of alloying elements Mo and W on Ni silicides formation;Microelectronic Engineering;2014-05
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