Author:
Xu Dongchao,Wang Quan,Wu Xuewang,Zhu Jie,Zhao Hongbo,Xiao Bo,Wang Xiaojia,Wang Xiaoliang,Hao Qing
Publisher
Springer Science and Business Media LLC
Subject
Energy Engineering and Power Technology
Reference75 articles.
1. Johnson W, Piner E L. GaN HEMT Technology. Berlin: Springer Berlin Heidelberg, 2012
2. Wu Y R, Singh J. Transient study of self-heating effects in AlGaN/GaN HFETs: consequence of carrier velocities, temperature, and device performance. Journal of Applied Physics, 2007, 101(11): 113712
3. Rosker M, Bozada C, Dietrich H, Hung A, Via D, Binari S, Vivierios E, Cohen E, Hodiak J. The DARPA wide band gap semiconductors for RF applications (WBGS-RF) program: Phase II results. In: CS MANTECH Conference. Tampa, Florida, USA, 2009
4. Lee H, Agonafer D D, Won Y, Houshmand F, Gorle C, Asheghi M, Goodson K. Thermal modeling of extreme heat flux microchannel coolers for GaN-on-SiC semiconductor devices. Journal of Electronic Packaging, 2016, 138(1): 010907
5. Calame J P, Myers R E, Binari S C, Wood F N, Garven M. Experimental investigation of microchannel coolers for the high heat flux thermal management of GaN-on-SiC semiconductor devices. International Journal of Heat and Mass Transfer, 2007, 50(23–24): 4767–4779
Cited by
19 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献