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Reference15 articles.
1. Gibbons, J. F., Lee, K. F., One-gate-wide CMOS inverter on laser-recrystallized polysilicon, IEEE Electron Device Lett., vol. EDL-1, June 1980, 117–118.
2. Chen, C. E., Lam, H. W., Smlhi, S. D. S. et al., Stacked CMOS SRAM cell, IEEE Electron Device Lett., vol. EDL-4, Aug. 1983, 272–274.
3. Colinge, J. P., Demoulin, E., Lobet, M., Stacked transistors CMOS (ST-MOS), and nMOS technology modified to CMOS, IEEE Trans. Electron Devices, vol. ED-29, Apr. 1982, 585–589.
4. Kunio, T., Oyama, K., Hayashi, Y. et al., Three-dimensional IC’s, having four stacked active device layers, in IEDM Tech. Dig., 1989, 837–840.
5. Pae, S., Su, T., Denton, J. P. et al., Multiple layers of silicon-on-insulator islands fabrication by selective epitaxial growth, IEEE Electron Device Letters, 1999, 20(5): 194–196.