Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Reference34 articles.
1. Naiyum T (2007) Effect of size non-uniformity on photoluminescence from ensembles of InAs quantum dots embedded in GaAs, vol. 42. Kluwer Academic Publishers-Plenum Publishers, pp 6913–6916
2. Thomas JC, Millunchick JM, Van der Ven A, Modine NA (2014) Phase stability analysis of the InAs/GaAs (001) wetting layer from first principles. Phys Rev B 89:205306
3. Zieliński M, Gołasa K, Molas MR, Goryca M, Kazimierczuk T, Smoleński T, Golnik A, Kossacki P, Nicolet AAL, Potemski M, Wasilewski ZR, Babiński A (2015) Excitonic complexes in natural InAs/GaAs quantum dots. Phys Rev B 91:085303
4. Jung IY, Park YM, Park YJ, Lee JI, Kim TW (2006) Dependence of the microstructural and the optical properties on the GaAs spacer thickness in InAs/GaAs double quantum dots grown by using the Indium-flush procedure. J Mater Sci 41:5036–5039. doi: 10.1007/s10853-006-0133-5
5. Cai LC, Chen H, Bao CL, Huang Q, Zhou JM (2004) Transport properties of InAs epilayers grown on GaAs substrates by using the prelayer technique. J Mater Sci 39:2637–2640. doi: 10.1023/B:JMSC.0000020047.61719.50
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