Charge-based deep level transient spectroscopy of B-doped and undoped polycrystalline diamond films
Author:
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Link
http://link.springer.com/article/10.1007/s10853-017-1217-0/fulltext.html
Reference32 articles.
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3. Davis RF (1993) Deposition, characterization, and device development in diamond, silicon carbide, and gallium nitride thin films. J Vac Sci Technol A 11:829–837. doi: 10.1116/1.578313
4. Ballutaud D, Jomard F, Kociniewski T, Rzepka E, Girard H, Saada S (2008) Sp3/sp2 character of the carbon and hydrogen configuration in micro and nanocrystalline diamond. Diam Relat Mater 17:451–456
5. Rakha SA, Jianqing C, Huihao X, Guojun Y, Zhu D, Gong J (2009) Incorporation of hydrogen in diamond thin films. Diam Relat Mater 18:1247–1252
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