Chemical pressure in the correlated narrow-gap semiconductor FeGa3

Author:

Verchenko Valeriy Yu.ORCID,Zubtsovskii Alexander O.,Tsirlin Alexander A.,Shevelkov Andrei V.

Funder

Russian Foundation for Basic Research

European Regional Development Fund

Alexander von Humboldt-Stiftung

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference21 articles.

1. Häussermann U, Boström M, Viklund P, Rapp Ö, Björnängen T (2002) FeGa3 and RuGa3: semiconducting intermetallic compounds. J Solid State Chem 165:94–99

2. Yannello VJ, Fredrickson DC (2015) Generality of the 18-n rule: intermetallic structural chemistry explained through isolobal analogies to transition metal complexes. Inorg Chem 54:11385–11398

3. Arita M, Shimada K, Utsumi Y, Morimoto O, Sato H, Namatame H, Taniguchi M, Hadano Y, Takabatake T (2011) Electronic structure of a narrow-gap semiconductor FeGa3 investigated by photoemission and inverse photoemission spectroscopies. Phys Rev B 83(245116):5

4. Tsujii N, Yamaoka H, Matsunami M, Eguchi R, Ishida Y, Senba Y, Ohashi H, Shin S, Furubayashi T, Abe H, Kitazawa H (2008) Observation of energy gap in FeGa3. J Phys Soc Jpn 77(024705):5

5. Hadano Y, Narazu S, Avila MA, Onimaru T, Takabatake T (2009) Thermoelectric and magnetic properties of a narrow-gap semiconductor FeGa3. J Phys Soc Jpn 78(013702):4

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