Dissociated $$ \frac{1}{3}\langle 0\bar{1}11\rangle $$ 1 3 〈 0 1 ¯ 11 〉 dislocations in Bi2Te3 and their relationship to seven-layer Bi3Te4 defects-Reference-Cited by-同舟云学术

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Dissociated $$ \frac{1}{3}\langle 0\bar{1}11\rangle $$ 1 3 〈 0 1 ¯ 11 〉 dislocations in Bi2Te3 and their relationship to seven-layer Bi3Te4 defects

Published:2014-01-29 Issue:11 Volume:49 Page:3970-3979
ISSN:0022-2461
Container-title:Journal of Materials Science
language:en
Short-container-title:J Mater Sci

Author:

Medlin D. L.,Erickson K. J.,Limmer S. J.,Yelton W. G.,Siegal M. P.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/s10853-014-8035-4.pdf

Reference49 articles.

1. Nolas GS, Sharp J, Goldsmid HJ (2001) Thermoelectrics: basic principles and new materials developments. Springer, Berlin

2. Hasan MZ, Kane CL (2010) Colloquium: topological insulators. Rev Mod Phys 82:3045–3066

3. Lange PW (1939) Ein Vergleich zwischen Bi2Te3 und Bi2Te2S. Naturwissenschaften 27:133–134

4. Nakajima S (1963) The crystal structure of Bi2Te3−xSex. J Phys Chem Solids 24:479–485

5. Adam A (2007) Rietveld refinement of the semiconducting system Bi2−xFexTe3 from X-ray powder diffraction. Mater Res Bull 42:1986–1994

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