Enhancing the photovoltaic effect in the infrared region by germanium quantum dots inserted in the intrinsic region of a silicon p-i-n diode with nanostructure-Reference-Cited by-同舟云学术

Enhancing the photovoltaic effect in the infrared region by germanium quantum dots inserted in the intrinsic region of a silicon p-i-n diode with nanostructure

Published:2011-06-28 Issue:1 Volume:47 Page:93-99
ISSN:0022-2461
Container-title:Journal of Materials Science
language:en
Short-container-title:J Mater Sci

Author:

Tawancy H. M.

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/s10853-011-5728-9.pdf

Reference23 articles.

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5. Comments on the article: “Enhancing the photovoltaic effect in the infrared region by germanium quantum dots inserted in the intrinsic region of a silicon p-i-n diode with nanostructure” by H. M. Tawancy (Journal of Materials Science DOI: 10.1007/s10853-011-5728-9);Journal of Materials Science;2011-10-27