The electronics transport mechanism of grain and grain boundary in semiconductive hafnium oxynitride thin film-Reference-Cited by-同舟云学术

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The electronics transport mechanism of grain and grain boundary in semiconductive hafnium oxynitride thin film

Published:2019-12-02 Issue:7 Volume:55 Page:2881-2890
ISSN:0022-2461
Container-title:Journal of Materials Science
language:en
Short-container-title:J Mater Sci

Author:

Lin Zude^ORCID,Li Xiuyan^ORCID,Zeng Yujin^ORCID,You Minmin^ORCID,Wang Fangfang^ORCID,Liu Jingquan^ORCID

Funder

National Key R&D Program of China

National Natural Science Foundation of China

Research Program of Shanghai Science and Technology Committee

Program of Shanghai Academic Research Leader

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/s10853-019-03952-4.pdf

Reference42 articles.

1. Gu ZQ, Hu CQ, Fan XF, Xu L, Wen M, Meng QN, Zhao L, Zheng XL, Zheng WT (2014) On the nature of point defect and its effect on electronic structure of rocksalt hafnium nitride films. Acta Mater 81:315–325

2. Huang HH, Fan XF, Hu CQ, Singh DJ, Jiang Q, Zheng WT (2015) Transformation of electronic properties and structural phase transition from HfN to Hf3N4. J Phys Condens Matter 27:225501

3. Lin ZD, Zhan GH, You MM, Yang B, Chen X, Wang XL, Zhang WP, Liu JQ (2018) NTC thin film temperature sensors for cryogenics region with high sensitivity and thermal stability. Appl Phys Lett 113:133504

4. Garbrecht M, Schroeder JL, Hultman L, Birch J, Saha B, Sands TD (2016) Microstructural evolution and thermal stability of HfN/ScN, ZrN/ScN, and Hf0.5Zr0.5N/ScN metal/semiconductor superlattices. J Mater Sci 51:8250–8258. https://doi.org/10.1007/s10853-016-0102-6

5. Grosser M, Seidel H, Schmid U (2017) Microstructure and mechanical properties of sputter deposited tantalum nitride thin films after high temperature loading. Thin Solid Films 629:69–78

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