Effects of Zn-doping on structure and electrical properties of p-type conductive CuCr1−x Zn x O2 delafossite oxide-Reference-Cited by-同舟云学术

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Effects of Zn-doping on structure and electrical properties of p-type conductive CuCr1−x Zn x O2 delafossite oxide

Published:2015-12-28 Issue:7 Volume:51 Page:3592-3599
ISSN:0022-2461
Container-title:Journal of Materials Science
language:en
Short-container-title:J Mater Sci

Author:

Chuai Ya-Hui,Wang Xin,Shen Hong-Zhi,Li Ya-Dan,Zheng Chuan-Tao,Wang Yi-Ding

Funder

National Natural Science Foundation of China

National Key Technology R&D Program

Science and Technology Department of Jilin Province

Changchun Municipal Science and Technology Bureau

the State Key Laboratory of Integrated Optoelectronics, Jilin University

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/s10853-015-9679-4.pdf

Reference32 articles.

1. Ginley D, Roy B, Ode A, Warmsingh C, Yoshida Y, Parilla P, Teplin C, Kaydanova T, Miedaner A, Curtis C (2003) Non-vacuum and PLD growth of next generation TCO materials. Thin Solid Films 445:193–198

2. Harvey SP, Mason TO, Gassenbauer Y, Schafranek R, Klein A (2006) Surface versus bulk electronic/defect structures of transparent conducting oxides: I. Indium oxide and ITO. J Phys D: Appl Phys 39:3959

3. Popovich ND, Wong SS, Ufer S, Sakhrani V, Paine D (2003) Electron-transfer kinetics at ITO films: influence of oxygen plasma. J Electrochem Soc 150:H255–H259

4. Nomura K, Shibata N, Maeda M (2002) Preparation of zinc oxide thin films by pulsed current electrolysis. J Electrochem Soc 149:F76–F80

5. Park DH, Cho YH, Do YR, Ahn BT (2006) Characterization of Eu-doped SnO2 thin films deposited by radio-frequency sputtering for a transparent conductive phosphor layer sensors and displays: principles, materials, and processing. J Electrochem Soc 153:H63–H67

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1. Impact of Zn doping on the structural properties and thermoelectric performance of CuCr _0.85 Mg _(0.15-x) Zn _x O ₂ (x ≤ 0.05) delafossite materials;Advanced Composite Materials;2024-01-02

2. Epitaxial Growth of Bi2Se3 Infrared Transparent Conductive Film and Heterojunction Diode by Molecular Beam Epitaxy;Frontiers in Chemistry;2022-01-25

3. Dependence of mechanical and electrical properties on crystal orientation of CuCr0.95Mg0.05O2 ceramics;Journal of Physics: Conference Series;2021-09-01

4. Compensation of Zn substitution and secondary phase controls effective mass and weighted mobility in In and Ga co-doped ZnO material;Journal of Materiomics;2021-07

5. The roles of interstitial oxygen and phase compositions on the thermoelectric properties CuCr0.85Mg0.15O2 delafossite material;Journal of Alloys and Compounds;2021-06

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