Revealing the structure and evolution of entrained oxide film in Mg–Y alloy castings

Author:

Li Tian,Davies J. M. T.,Zhu XiangzhenORCID

Abstract

AbstractThe structure and evolution of oxide film in Mg alloys have been a research objective for a long time but are still unclear up to now. In the present work, the structure of the entrained oxide film (which is also known as bifilm) in Mg–Y alloy castings protected by SF6/air cover gas was characterized. It was found that the entrained oxide film can be divided into two typical types: (1) single-layered F-rich films and (2) double-layered films with a F-rich inner layer and a F-poor outer layer. Based on the experimental phenomena and thermodynamic calculation, the evolution mechanism of the oxide film was also revealed. It was found that F element from the cover gas reacted with the melt firstly to form the initial F-rich single-layered film. Then, O and S were also involved in the reaction, transforming the initial film to be a (F, O, S)-rich single-layered film. Finally, when the F element was depleted, the newly formed layer on the existing oxide film is characteristically F-poor but (O, S)-enriched, leading to a double-layered oxide film. It was also found that the oxide film grew faster in SF6/air cover gas than in SF6/CO2 cover gas, resulting in a higher repeatability of mechanical properties of Mg–Y alloy castings.

Funder

Engineering and Physical Sciences Research Council

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3