Systematic theoretical investigation of structures, stabilities, and electronic properties of rhodium-doped silicon clusters: Rh2Si n q (n = 1

Systematic theoretical investigation of structures, stabilities, and electronic properties of rhodium-doped silicon clusters: Rh2Si n q (n = 1–10; q = 0, ±1)

Published:2015-06-19 Issue:18 Volume:50 Page:6180-6196
ISSN:0022-2461
Container-title:Journal of Materials Science
language:en
Short-container-title:J Mater Sci

Author:

Zhang Shuai,Zhang Yu,Yang Xingqiang,Lu Cheng,Li Genquan,Lu Zhiwen

Funder

National Natural Science Foundation of China

973 Program of China

Postdoctoral Science Foundation of China

Program for Science & Technology Innovation Talents in Universities of Henan Province

Open Project of State Key Laboratory of Superhard Materials

Young Core Instructor Foundation of Henan Province

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/s10853-015-9175-x.pdf

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