A copper- and boron-related defect in silicon-Reference-Cited by-同舟云学术

A copper- and boron-related defect in silicon

Published:1990-03 Issue:3 Volume:50 Page:241-247
ISSN:0721-7250
Container-title:Applied Physics A Solids and Surfaces
language:en
Short-container-title:Appl. Phys. A

Author:

Hage J.,Prigge H.,Wagner P.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00324489.pdf

Reference22 articles.

1. H. Prigge, P. Gerlach, P.O. Hahn, A. Schnegg: Ext. Abstracts 89-1, The Electrochemical Society, Inc., Pennington, NJ (1989) p. 372

2. U. Reisloehner, S. Deubler, P. Dohlus, D. Forkel, J. Meier, H. Wolf, W. Witthuhn: In Defects in Silicon, ed. by C.A.J. Ammerlaan, A. Chantre, P. Wagner (North-Holland, Amsterdam 1989)

3. R. Keller, M. Deicher, W. Pfeiffer, H. Skudlik, D. Steiner, Th. Wichert: In Defects in Silicon, ed. by C.A.J. Ammerlaan, A. Chantre, P. Wagner (North-Holland, Amsterdam 1989)

4. R. Keller, M. Deicher, W. Pfeiffer, H. Skudlik, D. Steiner, Th. Wichert: Proc. of The Int. Conf. on the Science and Technology of Defect Control in Semiconductors, Yokohama, Sept. (1989)

5. Th. Prescha, T. Zundel, J. Weber, H. Prigge, P. Gerlach: In Defects in Silicon, ed. by C.A.J. Ammerlaan, A. Chantre, P. Wagner (North-Holland, Amsterdam 1989)

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