An analysis of distributed Gunn effect-Reference-Cited by-同舟云学术

An analysis of distributed Gunn effect

Published:1981-09 Issue:5 Volume:2 Page:883-904
ISSN:0195-9271
Container-title:International Journal of Infrared and Millimeter Waves
language:en
Short-container-title:Int J Infrared Milli Waves

Author:

Awai Ikuo,Itoh Tatsuo

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Instrumentation,Radiation

Link

http://link.springer.com/content/pdf/10.1007/BF01006936.pdf

Reference13 articles.

1. M. E. Hines, ?High-frequency negative-resistance circuit principles for Esaki diode applications?,Bell System Technical Journal, Vol. 34, pp. 477?513, May 1960.

2. T. Yamamoto, A. Shimizu and J. Nishizawa, ?Theoretical analysis of the amplification by the diode with homogeneously distributed structures?,Report Res. Inst. Elec. Comm., Tohoku University, Sendai, Japan, Vol. 14, pp. 63?78, 1962.

3. T. A. Midford and H. C. Bowers, ?A two-port IMPATT diode travelling wave amplifier?,Proc. IEEE, Vol. 56, pp. 1724?1725, October 1968.

4. M. Franz and J. B. Beyer, ?The traveling wave IMPATT mode?,IEEE Trans. Microwave Theory and Techniques, Vol. MTT-26, pp. 681?685, November 1978.

5. K. Yokoo and S. Ono, ?Electronically tunable Gunn diode oscillator?,Electronics and Communications in Japan, Vol. 58-B, pp. 56?65, October 1975.

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