Photo-induced excess low frequency noise in HgCdTe photodiodes

Author:

Williams G. M.,De Wames R. E.,Bajaj J.,Blazejewski E. R.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. R.E. DeWames, M. Hinnrichs, G.M. Williams and J. Bajaj, IRIS Detector Specialty Conference, Aug. 1985

2. S.P. Tobin, S. Iwasa and T.J. Tredwell,IEEE Trans. Electron. Devices ED-27, 43 (1980).

3. H.K. Chung, M.A. Rossberg and P.H. Zimmermann,J. Vac. Sci. Technol. A 3, 189 (1985).

4. W.A. Radford and C.E. Jones,J. Vac. Sci. Technol. A 3, 183 (1985).

5. G.M. Williams, J. Bajaj, M. Hinnrichs, J.P. Rode and W.E. Tennant, IRIS Detector Specialty Conference, 1984.

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1. Area-dependent gain and noise characteristics of mid-wavelength infrared HgCdTe planar electron avalanche photodiodes;Materials Research Express;2022-08-01

2. Noise Attributes of LWIR HDVIP HgCdTe Detectors;Journal of Electronic Materials;2008-04-09

3. Preface;Specular Gloss;2008

4. References;Specular Gloss;2008

5. Noise characteristics of HDVIP HgCdTe LWIR detectors;SPIE Proceedings;2007-04-27

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