The early oxynitridation stages of hydrogen-terminated (100) silicon after exposure to N 2 :N 2 O. Nitrogen bonding states-Reference-Cited by-同舟云学术

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The early oxynitridation stages of hydrogen-terminated (100) silicon after exposure to N 2 :N 2 O. Nitrogen bonding states

Published:2002-11-01 Issue:5 Volume:75 Page:585-590
ISSN:0947-8396
Container-title:Applied Physics A: Materials Science & Processing
language:
Short-container-title:Applied Physics A: Materials Science & Processing

Author:

Cerofolini G.F.,Bongiorno C.,Camalleri M.,Condorelli G.G.,Fragalà I.L.,Galati C.,Lorenti S.,Renna L.,Spinella C.,Viscuso O.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s003390101033.pdf

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nitriding process for next-generation semiconductor devices by VHF (162 MHz) multi-tile push-pull plasma source;Applied Surface Science;2020-03

2. Characterization of a new fluorescence-enhancing substrate for microarrays with femtomolar sensitivity;Sensors and Actuators B: Chemical;2014-03

3. Chemical Engineering of Silicon with Functional Molecules;Science of Advanced Materials;2011-06-01

4. Grafting Cavitands on the Si(100) Surface;Langmuir;2006-11-07

5. X-ray absorption and photoelectron spectroscopic study of plasma-nitrided SiO2 film;Journal of Applied Physics;2005-06

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