Ultra-large lateral grain growth by double laser recrystallization of a-Si films-Reference-Cited by-同舟云学术

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Ultra-large lateral grain growth by double laser recrystallization of a-Si films

Published:2001-09 Issue:3 Volume:73 Page:317-322
ISSN:0947-8396
Container-title:Applied Physics A Materials Science & Processing
language:en
Short-container-title:Appl Phys A

Author:

Lee M.,Moon S.,Hatano M.,Grigoropoulos C.P.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/s003390100874.pdf

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Nanotechnology for Detection of Small Mass Difference;Mass Metrology;2019

4. Laser recrystallization for efficient multi-crystalline silicon solar cell;Journal of Physics D: Applied Physics;2016-07-11

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