The tin-vacancy pair defect in silicon-Reference-Cited by-同舟云学术

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The tin-vacancy pair defect in silicon

Published:1981-06 Issue:1-4 Volume:10 Page:751-757
ISSN:0304-3843
Container-title:Hyperfine Interactions
language:en
Short-container-title:Hyperfine Interact

Author:

Damgaard S.,Petersen J. W.,Weyer G.

Publisher

Springer Science and Business Media LLC

Subject

Physical and Theoretical Chemistry,Condensed Matter Physics,Nuclear and High Energy Physics,Atomic and Molecular Physics, and Optics

Link

http://link.springer.com/content/pdf/10.1007/BF01022005.pdf

Reference15 articles.

1. G.D. Watkins, Inst. Phys. Conf. Ser.23, 1 (1974)

2. J.W. Corbett, J.C. Bourgoin, L.J. Cheng, J.C. Corelli, Y.H. Lee, P.M. Mooney, and C. Weigel, Inst. Phys. Conf. Ser.31, 1 (1976)

3. G. Weyer, A. Nylandsted Larsen, B.I. Deutch, J.U. Andersen, and E. Antoncik, Hyp. Int.1, 93 (1975)

4. N.E. Holm, A. Nylandsted Larsen, B.I. Deutch, and G. Weyer, Inst. Phys. Conf. Ser46, 573 (1979)

5. N.E. Holm and G. Weyer, J. Phys. C.13, 1109 (1980)

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dopants;Computational Microelectronics;2004

2. Isovalent Impurities;Computational Microelectronics;2004

3. Tin-vacancy acceptor levels in electron-irradiated n-type silicon;Physical Review B;2000-08

4. Similar point defects in crystalline and amorphous silicon;Physical Review B;1994-06-15

5. van den Hovenet al. reply;Physical Review Letters;1993-04-05

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