Numerical Evaluation of Thermal Resistance for Power MOSFET Packaged in Hermetic Method

Author:

Choi Na-Yeon,Zhang Sung-UkORCID

Funder

National Research Foundation of Korea

Ministry of Education

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering

Reference17 articles.

1. Lee IH (2017) GaN power semiconductor power electronics technology. J Korean Inst Power Electron 22(1):29–34

2. Shin HK (2016) Power semiconductor technology development trend. Proc Korean Inst Illumin Electr Install Eng 30(2):4–10

3. Chun HW, Yang IS (2013) Market and technology development trends of power IC. Electron Telecomm Trends 28(6):206–216

4. HW Kim, (2016) The present and future of silicon carbide (SiC) power semiconductor devices. J Electr World Monthly Magaz, pp 49–54

5. Schulz-Harder J, Meyer A (2007) Hermetic packaging for power multichip modules. Eur Conf Power Electron Appl 2007:1–10. https://doi.org/10.1109/EPE.2007.4417533

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