Author:
Zhang Yu,Yuan Yafei,Li Xiaoqing,Yang Ming,Feng Na,Lu Ziwei,He Jihao,Ji Qizheng
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering
Reference15 articles.
1. Gan Y, Xu X, Maghlakelidze G, Yang S, Huang W, Seol B, Pommerenke D (2016) System-level modeling methodology of ESD cable discharge to Ethernet transceiver through magnetics. IEEE Trans Electromagn Compat 58(5):1407–1416
2. Brennan CJ, Chatty K, Sloan J, Dunn P, Muhammad M, Gauthier R (2007) Design automation to suppress cable discharge event (CDE) induced latchup in 90 nm CMOS ASICs. Microelectron Reliab 47(7):1069–1073
3. Ke MD, Lai TH (2008) Investigation on robustness of CMOS devices against cable discharge event (CDE) under different layout parameters in a deep-submicrometer CMOS technology. IEEE Trans Electromagn Compat 50(4):810–821
4. Lai TX, Ker MD (2006) Method to evaluate cable discharge event (CDE) reliability of integrated circuits in CMOS technology. In: Proceedings of the 7th international symposium on quality electronic design, pp 597–602
5. Lin Y, Park J, Isachar O, Chaikin S, Chundru R, Duvvury C, Matum S, Diep T (2008) The challenges of on-chip protection for system level cable discharge events (CDE). In: 30th electrical overstress/electrostatic discharge symposium, pp 125–131
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