Junction Temperature Estimation of Direct-Drive GaN HEMTs in Two-Level Inverters for Driving PMSM Through Power Loss Analysis
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering
Link
https://link.springer.com/content/pdf/10.1007/s42835-023-01688-5.pdf
Reference32 articles.
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3. Jang J (2022) 600 V p-type gate-doped enhancement mode gallium nitride-based transistros for AC-to-DC power factor-corrected rectifiers operating at 200 kHz. J Power Electron 22(7):1219–1230
4. Zhang R, Wang Y, Xu H (2021) A novel multi-physics field optimization method for GaN HEMT circuit design. J Power Electron 21(3):616–623
5. Ravinchandra K, Freddy TKS, Lee J-S, Lee K-B, Mantooth HA, Thiruchelvam V, Xian JIYY (2022) Review of wide band-gap technology: power device, gate driver, and converter design. J Power Electron 22(8):1398–1413
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