Low-Temperature Die Bonding of SiC Chips with DBC Ceramic Substrates Using High-Density Ag (111) Nanotwinned Films-Reference-Cited by-同舟云学术

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Low-Temperature Die Bonding of SiC Chips with DBC Ceramic Substrates Using High-Density Ag (111) Nanotwinned Films

Published:2023-07-05 Issue: Volume: Page:
ISSN:1059-9495
Container-title:Journal of Materials Engineering and Performance
language:en
Short-container-title:J. of Materi Eng and Perform

Author:

Chuang Tung-Han,Yang Zi-Hong,Chen Yen-Ting,Chen Yin-Hsuan

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://link.springer.com/content/pdf/10.1007/s11665-023-08441-z.pdf

Reference24 articles.

1. J.B. Casady and R.W. Johnson, Status of Silicon Carbide (SiC) as a Wide-Bandgap Semiconductor for High-Temperature Applications—A Review, Solid State Electron, 1996, 39, p 1409–1422.

2. M. Bhatnagar and B.J. Baliga, Comparison of 6H-SiC, 3C-SiC, and Si for power devices, IEEE Trans. Electron Devices, 1993, 40, p 645–655.

3. R.W. Cahn, Physical Metallurgy, 2nd ed. Elsevier, Amsterdam, 1970.

4. L. Lu, Y. Shen, X. Chen, L. Qian, and K. Lu, Ultrahigh Strength and High Electrical Conductivity in Copper, Science, 2004, 304, p 422–426.

5. L. Lu, X. Chen, X. Huang, and K. Lu, Revealing the Maximum Strength in Nano-Twinned Copper, Science, 2009, 323, p 607–610.

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