Defects in NTD InP probed by positron annihilation spectroscopy
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://link.springer.com/content/pdf/10.1007/BF02842353.pdf
Reference10 articles.
1. Vesaghi M A. Electrical properties of NTD GaAs[J].Phys Rev. B, 1982,25:5436.
2. Lee B, Pan N, Stillman G E. Neutron transmutation doping of high-purity Inp[J].J Appl Phys., 1987,62: 1129.
3. Najda S P, Holmes S, Stradling R Aet al. Donor identification in neutron-transmutation-doped [J].Semicond Sci Technol., 1989,4:791.
4. Boudart B, Mari B, Prevot B,et al. Efficency of neutron transmuation doping of Inp investigated by opical and electrical methods[J].Nucl. Instruments and Meth in Phys Res B, 1992,63:101.
5. Bretagon T, Dannefaer S, Kerr T. Indium vacancy in as-grown Inp: A positron annihiation study[J].J. Appl Phys, 1993,73:4697.
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