Current Conduction and Dielectric Behavior of High k-Y2O3 Films Integrated with Si Using Chemical Vapor Deposition as a Gate Dielectric for Metal-Oxide-Semiconductor Devices-Reference-Cited by-同舟云学术

Current Conduction and Dielectric Behavior of High k-Y2O3 Films Integrated with Si Using Chemical Vapor Deposition as a Gate Dielectric for Metal-Oxide-Semiconductor Devices

Published:2004-07 Issue:1-3 Volume:13 Page:121-127
ISSN:1385-3449
Container-title:Journal of Electroceramics
language:en
Short-container-title:J Electroceram

Author:

Rastogi A. C.,Desu S. B.

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanics of Materials,Condensed Matter Physics,Ceramics and Composites,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s10832-004-5087-x.pdf

Reference22 articles.

1. The National Technology Roadmap for Semiconductors, 3rd edition, Semiconductor Industry Association, San Jose, CA, 1997.

2. M. Cao, P.V. Voorde, M.Cox, and W. Greene, IEEE Electron Device Lett., 19, 291 (1998).

3. H.S. Momose, M. Ono, T. Yoshitomi, T. Ohguro, S. Nakamura, M. Saito, and H. Iwai, IEEE trans. Electron Devices, 43, 1233 (1996).

4. D.A. Buchanan and S.-H. Lo, Microelectron. Eng., 36, 13 (1997).

5. D.A. Buchanan, IBM Journal of R&D, 43, (1999).

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