Low resistivity as-deposited ohmic contacts to 3C-SiC-Reference-Cited by-同舟云学术

Low resistivity as-deposited ohmic contacts to 3C-SiC

Published:1995-04 Issue:4 Volume:24 Page:315-318
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Moki A.,Shenoy P.,Alok D.,Baliga B. J.,Wongchotigul K.,Spencer M. G.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02659693.pdf

Reference18 articles.

1. B.J. Baliga,J. Appl. Phys. 53, 1759 (1982).

2. T. Urushidani, S. Kobayashi, T. Kimoto and H. Matsunami,Silicon Carbide and Related Materials, ed. M. G. Spencer, R.P. Devaty, J.A. Edmond, M.A. Khan, R. Kaplan and M. Rahman (Bristol, United Kingdom: IOP Publishing, 1994), p. 471.

3. S.T. Sheppard, M.R. Melloch and J. A. J. Cooper,IEEE Trans. Elect. Dev. ED-41,1257 (1994).

4. D. Alok, B.J. Baliga and P.K. McLarty,Tech. Dig. oflEDM Washington, D.C., (1993), p. 691.

5. J.A. Edmond, J. Ryu, J.T. Glass and R.F. Davis,J. Electrochem. Soc. 135, 359 (1988).

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